碳化硅CVI工艺沉积动力学模拟研究Sedimentation Kinetic Simulation Research of Silicon Carbide CVI Process
汤哲鹏,王梦千,董凯
摘要(Abstract)：
化学气相渗透（CVI）工艺被广泛应用于制备碳基及碳化硅（SiC）基复合材料，CVI工艺是实现制备高纯度和高晶粒度SiC基体的SiC_f/SiC复合材料最佳方案。为了优化CVI制备SiC基体的工艺参数，本文主要研究了CVI工艺沉积SiC的动力学机理及数值模拟。对于CVI工艺SiC沉积的动力学，本文提出了SiC沉积过程的反应动力学机理模型，并通过耦合反应器内的流场和浓度场，模拟了甲基三氯硅烷（MTS）在CVI过程中的SiC沉积实验。通过对样品在CVI致密化过程中孔隙率的实验结果与模拟结果比较，表明该SiC沉积动力学模型的合理性。通过模拟获得了在反应器内的速度场和各组分（MTS, CH_3,SiCl_3）的浓度场分布情况，以及预制体致密化过程的密度分布情况。以上SiC的CVI工艺动力学模拟，对未来优化SiC_f/SiC复合材料CVI工艺具有重要的指导意义。
关键词(KeyWords)： SiC;CVI工艺;工艺参数;动力学
基金项目(Foundation): 国家自然科学基金(21676163)
作者(Author): 汤哲鹏,王梦千,董凯
DOI: 10.13958/j.cnki.ztcg.2023.01.001
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